A High Speed MOSFET for Switching Application

Hamed Sepahvand    and Soghra Raisi

doi:10.17485/ijst/2015/v8i22/61332

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A High Speed MOSFET for Switching Application

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Indian Journal of Science and Technology

DOI: 10.17485/ijst/2015/v8i22/61332

Year: 2015, Volume: 8, Issue: 22, Pages: 1-5

Original Article

A High Speed MOSFET for Switching Application

Hamed Sepahvand^{1 *} and Soghra Raisi ²

¹Department of Electrical Engineering, Abadan Branch, Islamic Azad University, Abadan, Iran; [email protected]
² Department of Electrical Engineering, Shoushtar Branch, Islamic Azad University, Shoushtar, Iran; [email protected]

This work is licensed under a Creative Commons Attribution 4.0 International License.

Abstract

This work introduces a new super junction MOSFET. High switching speed is an essential parameter in this device. Negative resistance in gas electron between GaAs and AlGaAs is used to design this structure. The new designed device stores much less charges in its channel, because its junction and parasitic capacitance are small. As well, in on-state it has lower resistance relative to the traditional device. Therefore, the amount of R_DS × Q_Cwhich is Figure of Merit (FOM) will decrease, enormously. The designed MOSFET has been applied in a 3–phase inverter and its performance for giving a sinusoidal output has been showed. All the simulations have been done in SILVACO software.
Keywords: Channel Charge, Inverter, Super Junction MOSFET