Indian Journal of Science and Technology
DOI: 10.17485/ijst/2014/v7i10.1
Year: 2014, Volume: 7, Issue: 10, Pages: 1461-1464
Original Article
Seyed Mohammad Hossein Mousakazemi1 , Seyedeh Maryam Banihashemian*2, Mehrzad Amiralian3 , Hassan Hajghassem3 , Seyedeh Habibeh Khaton Banihashemian3
1 Department of Basic Sciences, Payame Noor University, Tehran, Iran, [email protected]
2 Department of Physics , Faculty of Science, University of Malaya, 50603 Kuala Lumpur, [email protected]
3 Electrical Engineering Department, Islamic Azad University, Tehran, Iran
A simple method for developing a Schottky IR sensors consisting of metal (pt)- semiconductor (Si-p) is demonstrated in this work. PtSi/Si-p structure is formed by depositing platinum layer over cleaned Si surface using e-beam and embedded by Copper thin film. Current-voltage (I-V) characterization of PtSi/Si with and without copper is made at 77 K. The I-V measurements are made in the presence and absence of electromagnetic wave with infrared source. The result shows a significant increase in photocurrent and higher sensitivity in copper embedded PtSi/Si structure comparing to the conventional PtSi/Si structure. The CuPt layer created over the PtSi layer increases the PtSi sensitivity by trapping infrared radiation. This sensor with small size and high sensitive for IR radiation can be utilized in infrared imageing sensors, nanoplasmonics and nano-Photonics elements.
Keywords: Copper, Current-Voltage, Infrared Detector, PtSi
Subscribe now for latest articles and news.
