Hydrogen sensing properties of indium doped tin oxide thin films deposited by spray pyrolysis

H  Jafarzadeh; M  Rezaee Rokn Abadi; H  Arabshahi and N  Shahtahmasbi

doi:10.17485/ijst/2010/v3i1.10

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Hydrogen sensing properties of indium doped tin oxide thin films deposited by spray pyrolysis

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Indian Journal of Science and Technology

DOI: 10.17485/ijst/2010/v3i1.10

Year: 2010, Volume: 3, Issue: 1, Pages: 14-16

Original Article

Hydrogen sensing properties of indium doped tin oxide thin films deposited by spray pyrolysis

H. Jafarzadeh, M. Rezaee Rokn-Abadi, H. Arabshahi and N. Shahtahmasbi^*

Physics Department, Ferdowsi University of Mashhad, Mashhad, Iran
[email protected]

This work is licensed under a Creative Commons Attribution 4.0 International License.

Abstract

In this article the effect of indium impurity on tin oxide layers sensitivity have been studied. Tin oxide thin films without impurity and with different impurities are deposited by spray pyrolysis method and their structural layers have been characterized by x-ray diffraction spectrum and SEM technology. In different temperature we have calculated layer sensitivity. It is found that the most sensitivity is in the sample of 6% impurity at temperature of 200 °C. With increasing of impurity concentration the work temperature is decreased until in the 15% impurity sample the work temperature is decreased to 100 °C.
Keywords: Tin oxide, spray pyrolysis, thin films.