• P-ISSN 0974-6846 E-ISSN 0974-5645

Indian Journal of Science and Technology


Indian Journal of Science and Technology

Year: 2015, Volume: 8, Issue: 35, Pages: 1-8

Original Article

Overall Noise Analysis for Transisition Edge Sensor at Optical and Infra-Red Wavelengths


Transition-Edge Sensors (TESs) are the most promising devices as single photon detectors in the visible and infrared range. In particular ultra-fast TESs with few hundred ns response time and high quantum efficiency find application in different fields like quantum optics, quantum metrology and quantum information. In this work, the main objective is to measure the noise effect on the performance of the TESs when operated at visible and infrared wavelengths as the TESs performance depends on the sensor parameters and also on the noise level. The noise analysis is done by experimentally calculating the noise generated by the different block of the Single quantum interface device and to the TES. We have also seen from our numerical analysis that the overall noise of the system is 1  × 10 12 − nV / Hz . The above estimate is valid for the low-temperature steady –state biasing conditions of our TES device.
Keywords: Gain of Op-Amp, Photo Detectors, Single Quantum Interference Device, Tank Circuit


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