Tunnel Field Effect Transistors for Digital and Analog Applications: A Review

S  Poorvasha; M  Pown and B  Lakshmi

doi:10.17485/ijst/2017/v10i13/87202

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Tunnel Field Effect Transistors for Digital and Analog Applications: A Review

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Indian Journal of Science and Technology

DOI: 10.17485/ijst/2017/v10i13/87202

Year: 2017, Volume: 10, Issue: 13, Pages: 1-7

Review Article

Tunnel Field Effect Transistors for Digital and Analog Applications: A Review

S. Poorvasha^*, M. Pown and B. Lakshmi

School of Electronics Engineering, VIT University, Chennai – 600127, Tamil Nadu, India; [email protected], [email protected], [email protected]

*Author for correspondence
S. Poorvasha
School of Electronics Engineering, VIT University, Chennai – 600127, Tamil Nadu, India; [email protected]

This work is licensed under a Creative Commons Attribution 4.0 International License.

Abstract

Objectives: This paper presents the review of Tunnel FET (TFET) to overcome the major challenges faced by the conventional MOSFET. Analysis: Various device structures and characteristics of TFET along with different material and doping to improve efficiency are discussed in detail. In recent years, TFET seems to be an attractive device for analog/ mixed-signal applications due to their advantages such as high ON current (ION), low leakage current (IOFF), reduced values of threshold voltage (VT) and low Subthreshold Swing (SS).

Keywords: Asymmetric Gate Oxide, Band-to-Band Tunneling, Double Gate, Gate on Drain Overlap, Subthreshold Swing, Tunnel FET