Indian Journal of Science and Technology
Year: 2017, Volume: 10, Issue: 13, Pages: 1-7
S. Poorvasha*, M. Pown and B. Lakshmi
School of Electronics Engineering, VIT University, Chennai – 600127, Tamil Nadu, India; [email protected], [email protected], [email protected]
*Author for correspondence
School of Electronics Engineering, VIT University, Chennai – 600127, Tamil Nadu, India; poorvash[email protected]
Objectives: This paper presents the review of Tunnel FET (TFET) to overcome the major challenges faced by the conventional MOSFET. Analysis: Various device structures and characteristics of TFET along with different material and doping to improve efficiency are discussed in detail. In recent years, TFET seems to be an attractive device for analog/ mixed-signal applications due to their advantages such as high ON current (ION), low leakage current (IOFF), reduced values of threshold voltage (VT) and low Subthreshold Swing (SS).
Keywords: Asymmetric Gate Oxide, Band-to-Band Tunneling, Double Gate, Gate on Drain Overlap, Subthreshold Swing, Tunnel FET
Subscribe now for latest articles and news.