Indian Journal of Science and Technology
Year: 2019, Volume: 12, Issue: 26, Pages: 1-4
M. Aalelai Vendhan
Department of Electronics and Communication Engineering, Panimalar Engineering College, Chennai - 600123, Tamilnadu, India; [email protected]
Objective: To compare and analyse different FinFET full adder circuits by varying the temperature. Method/Analysis: A 1-bit full adder is designed using various logic styles and the performance of these adders are compared over a range of temperature values. 32nm FinFET Predictive Technology Model (PTM) is used for designing purpose. Various logic design styles utilised are Complementary Metal-Oxide Semiconductor (CMOS) logic, Transmission Gate (TG) logic, Complementary Pass-Transistor (CPTL) logic, Gate Diffusion Input (GDI) logic. Cadence Virtuoso and Spectre are used for designing and simulation purpose, respectively. Findings: The performance of these adders are analysed based on key circuit metrics like static power, dynamic power, leakage power, delay and power delay product (PDP). On comparison, it is evident that the GDI based adder consumes less leakage power. Also, the propagation delay and power delay product is very less in GDI adder. Novelty/Improvements: The simulation results prove that the GDI adder structure outperforms other structures in sub nanometer technology. This advantage makes GDI technology suitable for realisation of combinational circuits. Future research in digital circuits can be carried out by using GDI technology for designing low power and compact integrated circuit design.
Keywords: Complementary Pass-Transistor, Delay, FinFET, Gate Diffusion Input, Leakage Power, Low Power Adder, Transmission Gate, CMOS
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