Indian Journal of Science and Technology
Year: 2017, Volume: 10, Issue: 42, Pages: 1-5
Kapil Gupta* and Sarvesh Kumar
Department of Physics, Faculty of Engineering and Technology, Manav Rachna International University, Sector-43, Faridabad – 121004, Haryana, India; [email protected], [email protected]
*Author For Correspondence
Department of Physics, Faculty of Engineering and Technology, Manav Rachna International University, Sector-43, Faridabad – 121004, Haryana, India; [email protected]
Objective: To deposit the highly crystalline thin film of vanadium pentoxide on Si substrate. Method: In this work, we deposited vanadium oxide thin films by RF sputtering setup. These deposited thin films were annealed at 500°C for 1 hour in argon atmosphere. Grazing Incidence X-Ray Diffraction (GIXRD), Raman Spectroscopy and Fourier Transform Infrared Spectroscopy (FTIR) are used to analyze structural properties of as-deposited and annealed thin films of vanadium oxide. Finding: GIXRD spectra of annealed film revealed that highly crystalline thin film of vanadium pentoxide (V2 O5 ) is obtained. The texture of the film is oriented along c- axis, perpendicular to the surface of the Si substrate and it’s a, b axis are parallel to the surface of substrate. Raman Spectroscopy and FTIR results confirmed the layered structure of the annealed vanadium pentoxide thin film. After post annealing, the highly crystalline and layered structure of V2 O5 thin film on Si substrate is obtained. Applications: Vanadium pentoxide thin films are used in electrochromic devices, lithium batteries, and energy storage devices and as toxic gas sensors.
Keywords: Vanadium Pentoxide (V2 O5 ), Grazing Incidence X-Ray Diffraction (GIXRD), Raman Spectroscopy, RF Sputtering
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