Indian Journal of Science and Technology
DOI: 10.17485/ijst/2015/v8iS2/67807
Year: 2015, Volume: 8, Issue: Supplementary 2, Pages: 1-9
Original Article
Siddharth Saxena* , M. Srikanth, Shantanu Jawale and R. Sakthivel
VLSI, SENSE, VIT University, Vellore - 600127, Tamilnadu, India;
[email protected], [email protected], [email protected], [email protected]
In this paper the two different architectures of voltage controlled oscillator using MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and FinFET are compared and analyzed. The comparison is on the basis of different parameters of VCO (Voltage Controlled Oscillator). The parameters which are analyzed are Voltage swing, Tuning Range, Power Consumption, number of stages and phase noise. Two architectures of VCO namely Current Starved Ring Oscillator and Source coupled VCO are implemented on Cadence Virtuoso simulator. The results of simulation indicated that implementation using FinFET, gives very high tuning range of VCO as compared to MOSFET. The Tuning range in Current starved VCO using FinFET is found out to be 23 GHz to 32 GHz compared to MOSFET which is only 3 GHz to 6 GHz. The phase noise in Source coupled VCO FinFET is better than MOSFET for low frequency domain. According to power consumption analysis, Source coupled VCO FinFET is much better than Source coupled MOSFET.
Keywords: FinFET, Mosfet, Oscillator, Phase Noise
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