Indian Journal of Science and Technology
DOI: 10.17485/ijst/2010/v3i1.22
Year: 2010, Volume: 3, Issue: 1, Pages: 37-40
Original Article
H. Arabshahi1 , M. Rezaee Rokn-Abadi1 , F. Badieeyan1 and M.R. Khalvati 2*
1 Physics Department, Ferdowsi University of Mashhad, Mashhad, Iran
2 Physics Department, Shahrood University of Technology, Shahrood, Iran
[email protected]
Monte Carlo simulation of steady-state electron transport in ZnSe and ZnS diodes of n+ -i(n)-n+ structure with a 0.2 µm active layer length is described. The anode voltage ranges from 1 to 5 V. The distributions of electron energies and electron velocities, and the profiles of the electron density, electric field, potential and average electron velocity are computed. Based on these data, the near ballistic nature of the electron transport in the 0.2 µm long diode and the importance of the back-scattering of electrons from the anode n+ -layer are discussed. Also, the effects of the lattice temperature and doping on the length of the active layer are discussed. Our calculations show that electron reach to a higher drift velocity in the ZnSe than ZnS. So ZnSe material is a good candidate for high power device fabrication.
Keywords: Active layer, diode, drift velocity, ballistic.
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