Indian Journal of Science and Technology
Year: 2016, Volume: 9, Issue: 7, Pages: 1-5
*Author for Correspondence
E. Khoobjou Department of Electrical Engineering, Islamic Azad University, South Tehran Branch, Tehran, Republic of Iran; [email protected]
Background/Objectives: In this study we have investigating light propagation in the electro-optic modulators based on graphene-slot silicon waveguides. Methods/Statistical Analysis: In this simulation, μc = 0 eV and 0.515 eV is considered and the dielectric constants of the graphene for each μc is taken from the reference above. Since we consider a single telecom wavelength at 1550 nm, we use (n, k) material model to input the optical constant of the graphene. The materials in the material database correspond to the chemical potential of 0 eV and 0.515 eV, respectively. Findings: The field profiles are drastically changed as a function of a chemical potential. The field profile for μc = 0 eV keeps almost the same intensity after traveling 800 nm, while that for μc = 0 eV is considerably decayed. The results are about 96% and 45 % for μc = 0 eV and 0.515 eV, respectively and finally the loss for μc = 0.515 is considerably higher than that for μc = 0 eV
Keywords: Electro-Optic, Graphene-Slot, Modulators, Silicon, Waveguides
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