Indian Journal of Science and Technology

Abstract

Objectives: To compute the polarizability and diamagnetic susceptibility values of a shallow donor in the valley – orbit split A₁, T₂, and E states of a many valley semiconductor.

findings: We demonstrate the enhanced values of the above quantities in the excited states, which clearly indicate a catastrophic behavior when Metal-Insulator Transition is approached. In intense magnetic fields, the polarizability values decrease as the system behaves like a harmonic oscillator. In an electric field, the magnitude of the diamagnetic susceptibility values increases.

Keywords: Many Valley Semiconductor, Si, Valley-orbit Split States, Donor Polarizability, Diamagnetic Susceptibility.