Indian Journal of Science and Technology
Year: 2016, Volume: 9, Issue: 16, Pages: 1-6
Kyung Ki Kim*
*Author of Corresponding: Kyung Ki Kim School of Electronic and Electrical Engineering, Daegu University, Gyeongsan, South Korea; [email protected]
Any real architecture designed only in the CNFET technology as a hopeful substitution of the silicon CMOSFET has not been developed because of shortage of self-assembly CNFET technology for designing complex CNFET structures. Therefore, for designing the real architecture in the current self-assembly CNFET technology, the development of a simple CNFET circuit structure forming all the digital function is required. This paper proposes a simple CNFET circuit structure using back-gate voltages to design the real digital architecture and to overcome the high fabrication cost of CNFETs and manufacturing variability and imperfection of CNFET technology. The function of the proposed CNFET cell is determined by the back-gate voltages, and the determined function is the same as NAND or NOR gate function. The simulation results present that the propagation delay time of the ISCAS85 circuits in a 32nm Stanford CNFET technology deploying the proposed CNFET cells is reduced by over 42% compared to the conventional CNFET cell in ultra-low voltage (0.4V).
Keywords: Back-gate Voltage, Carbon Nanotube FET, CNFET, CNFET Digital Circuit Design, Multi-function Logic
Subscribe now for latest articles and news.