• P-ISSN 0974-6846 E-ISSN 0974-5645

Indian Journal of Science and Technology


Indian Journal of Science and Technology

Year: 2017, Volume: 10, Issue: 11, Pages: 1-6

Original Article

TCAD Simulation and Analysis of Drain Current and Threshold Voltage in Single Fin and Multi-Fin FinFET


Objectives: This study involves analysis the characteristics of Tri-gate single and double-fin FinFET. It shows the threshold voltage change due to depletion charges. Further, we investigate the effect of increasing number of fins on drain on-off current Methods/Statistical Analysis: In this work, it characterize leakiest path (minimum potential point in the channel) at weak inversion and strong inversion using analytical model. Here, the drain current equation is modelled by considering the effects of the depletion charges in the channel near the Source/Drain and substrate interface. Later, these results are verified using TCAD simulations. Findings: This model is extended for multi-fin FinFET, for analyzing the effect of increasing the number of fins and varying the thickness of fin on the drain ON (at VGS=VDD) current and drain OFF (at VGS=0) current (Leakage current) of trigateFinFET. Finally, it analyze the corner effect in trigateFinFET and propose a solution to reduce it. Application/Improvement: The increase in Threshold voltage with the inclusion of depletion charges. Also, an order increase in drain ON current with two fins keeping the short channel effects minimized.

Keywords: Corner Effect, Drain Current, FinFET, Round Corner


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