Design and Analysis of High Gain, Low Power and Low Voltage a-Si TFT based Operational Amplifier

G  Prabhakaran   and V  Kannan

doi:10.17485/ijst/2015/v8i16/59228

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Design and Analysis of High Gain, Low Power and Low Voltage a-Si TFT based Operational Amplifier

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Indian Journal of Science and Technology

DOI: 10.17485/ijst/2015/v8i16/59228

Year: 2015, Volume: 8, Issue: 16, Pages: 1-10

Original Article

Design and Analysis of High Gain, Low Power and Low Voltage a-Si TFT based Operational Amplifier

G. Prabhakaran^1* and V. Kannan²

¹Faculty of Electronics and Communication, Sathyabama University, Chennai-600119, Tamil Nadu, India; [email protected]
²Jeppiaar Institute of Technology, Sriperumbudur, Kanchipuram District, Kunnam-631604, Tamil Nadu, India

This work is licensed under a Creative Commons Attribution 4.0 International License.

Abstract

This paper investigates on the design of two stage Operational Amplifier (Op-Amp) with NMOS input at differential stage. This low power Op-Amp designed with Amorphous Silicon Thin Film Transistor (a-Si TFT) and MOS transistor. It is observed that the newly designed TFT Op-AMP operates in low voltage at 3V DC, with high gain, high output impedance and high phase margin and moderate power dissipation. A detailed design procedure is carried-out to design the proposed Op-Amp. HSPICE Circuit Simulator is used for simulation. Obtained results are compared with CMOS Op-Amp which uses the same circuit and design procedure. The output behavior of TFT Op-Amp is also compared with the existing work showing good agreement.
Keywords: Amorphous Silicon, CMOS, High Stability, Low Power, Operational Amplifier, Thin Film Transistor