Indian Journal of Science and Technology
DOI: 10.17485/ijst/2017/v10i13/111362
Year: 2017, Volume: 10, Issue: 13, Pages: 1-6
Original Article
Fatemeh Amiri1* , Fatemeh Foroutan1 , Mir Masumeh Amiri2 and Hossein Asghar Rahnamaye Aliabad3
1Department of Physics, Islamic Azad University of Mashhad, Mashhad, Iran; [email protected], [email protected] 2Department of Physics, University of Zabol, Zabol, Iran; [email protected] 3Department of Physics, Hakim Sabzevari University, Sabzevar, Iran; [email protected]
*Author for correspondence
Fatemeh Amiri
Department of Physics, Islamic Azad University of Mashhad, Mashhad, Iran; [email protected]
Objective: One of the main raising issues in chemical industries is improving the materials electric properties. For this purpose, we investigate the effect of substituted Mn on Indium and Zinc oxides by density functional approach. Methods: The impact of transition metal (Mn) on the electronic characteristics of Indium Oxide (In2 O3 ) and Zinc Oxide (ZnO) have been investigated, utilizing first-principles computation approach according to the density functional approach (DF), by Generalized Gradient Approximation (GGA). Results: Obtained results for band structure and density of states show that band gap values for indium oxide and zinc oxide are 1.4 eV, 0.75eV respectively. Substitution of Manganese alters the energy gap and a spin splitting influence is seen. Doped Indium Oxide with Mn and doped Zinc Oxide with Mn have a spin polarized band structure with different band gap for spin up and down states. Conclusion: We observed for doped ZnO in the spin-down state, a half- metallic behavior, whereas for the spin-up state it remains semiconductor.
Keywords: Building Integrated Photovoltaics, Li-Fi, V2V Communication, Visible Light Communication
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