• P-ISSN 0974-6846 E-ISSN 0974-5645

Indian Journal of Science and Technology


Indian Journal of Science and Technology

Year: 2015, Volume: 8, Issue: 28, Pages: 1-7

Original Article

Comparitive Loss Evaluation of Si IGBT Versus Sic Mosfet (Silicon Carbide) for 3 Phase Spwm Inverter


Background/Objectives: Reducing the losses of 3 phase spwm 2 level inverter by replacing the present semi conductor switches which are si igbt (silicon) with the latest sic mosfet (silicon carbide) switches. Methods/Statistical Analysis: si igbt (silicon) and sic mosfet (silicon carbide) are modelled in pspice using the data sheet parameters and the modelled switches are used to simulate the three phase spwm inverter and the losses of the system are compared. Findings: The three phase spwm inverter simulated at switching frequency ranges of 5khz, 8khz, 10khz, 15khz and it had been observed that the losses of the 3 phase spwm sic mosfet inverter are 29% less for 5khz switching frequency, 34% less for switching frequency of 8khz, 37% less for switching frequency of 10khz, 42% less for the switching frequency of 15khz over the 3 phase spwm inverter based on si igbt. Application/Improvements: The sic mosfet can replace the si igbt in 3 phase spwm inverter system for better efficiency and the pspice simulations showed similar results showing that sic mosfet is efficient than si igbt based three phase spwm inverter.
Keywords: Insulated Gate bi Polar Transistor (IGBT), Losses, Metal Oxide Semi Conductor Field Effect Transistor (MOSFET), Silicon (Si), Silicon Carbide (SIC), Sine Pulse Width Modulation (SPWM)


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