Indian Journal of Science and Technology
Year: 2019, Volume: 12, Issue: 40, Pages: 1-10
Narendra Yadava* and R. K. Chauhan
Department of Electronics & Communication Engineering, Madan Mohan Malaviya University of Technology, Gorakhpur, Uttar Pradesh 273016, India;
[email protected] , [email protected]
Objectives: In this work, the performance of single-gate and double-gate FD-SOI MOSFETs has been investigated in order to find out its utility RF applications. Methods/statistical analysis: The small-signal equivalent model is utilized to obtain the Y parameter of the devices and from which the minimum noise Figure and S parameter of the devices are derived and provides its applicability in the design of RFICs. The analysis is carried out using the Silvaco 2D ATLAS tool. Findings: The simplified small-signal equivalent models for both the devices are developed to analyze its high-frequency response more accurately, and to extract other important high-frequency (RF) parameters. Application/improvements: The derived S parameters are used to evaluate its high-frequency (RF) losses. In the SG FD-SOI MOSFET, the Insertion loss is 2.47 dB, the Transmission loss is 2.48 dB and the Reflection loss is 1.02 dB lower in comparison to DG FD-SOI MOSFET while its Return loss is 0.05 dB higher in comparison to that of DG FD-SOI MOSFET.
Keywords: FD-SOI MOSFET, RFICs, Leakage Current, Power Dissipation, RF Frequency
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