Temperature and doping dependencies of hot electron transport properties in bulk GaP, InP and Ga0.5In0.5P

A  Mokhles Gerami; H Rahimpour Soleimani; H  Arabshahi; and M  R  Khalvati

doi:10.17485/ijst/2009/v2i10.7

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Temperature and doping dependencies of hot electron transport properties in bulk GaP, InP and Ga0.5In0.5P

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Indian Journal of Science and Technology

DOI: 10.17485/ijst/2009/v2i10.7

Year: 2009, Volume: 2, Issue: 10, Pages: 10-13

Original Article

Temperature and doping dependencies of hot electron transport properties in bulk GaP, InP and Ga0.5In0.5P

A. Mokhles Gerami¹ , H.Rahimpour Soleimani¹ , H. Arabshahi² , and M. R. Khalvati³

¹Dept. of Physics, Univ. of Guilan, Rasht, Iran;
²Dept. of Physics, Ferdowsi Univ. of Mashhad, Mashhad, Iran
³Department of physics, Shahrood University of Technology, Shahrood, Iran

*Author for the correspondence:
H. Arabshahi
Dept. of Physics, Ferdowsi Univ. of Mashhad, Iran
E-mail: [email protected]

This work is licensed under a Creative Commons Attribution 4.0 International License.

Abstract

An ensemble Monte Carlo simulation has been carriedout to study electron transport properties in GaP, InP and Ga0.5In0.5P materials. The simulation results show that intervalley electron transfer plays a dominant role in higher electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. In addition, the electron velocity in GaP is less sensitive to temperature than other group III-V semiconductors like InP and Ga0.5In0.5P. So GaP devices are expected to be more tolerant to self-heating and high ambient temperature device modeling.

Keywords: Ensemble Monte Carlo; polar optical phonons; deformation potential; self-heating.