• P-ISSN 0974-6846 E-ISSN 0974-5645

Indian Journal of Science and Technology


Indian Journal of Science and Technology

Year: 2009, Volume: 2, Issue: 10, Pages: 10-13

Original Article

Temperature and doping dependencies of hot electron transport properties in bulk GaP, InP and Ga0.5In0.5P


An ensemble Monte Carlo simulation has been carriedout to study electron transport properties in GaP, InP and Ga0.5In0.5P materials. The simulation results show that intervalley electron transfer plays a dominant role in higher electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. In addition, the electron velocity in GaP is less sensitive to temperature than other group III-V semiconductors like InP and Ga0.5In0.5P. So GaP devices are expected to be more tolerant to self-heating and high ambient temperature device modeling.

Keywords: Ensemble Monte Carlo; polar optical phonons; deformation potential; self-heating.  


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