Indian Journal of Science and Technology
Year: 2009, Volume: 2, Issue: 10, Pages: 10-13
A. Mokhles Gerami1 , H.Rahimpour Soleimani1 , H. Arabshahi2 , and M. R. Khalvati3
1Dept. of Physics, Univ. of Guilan, Rasht, Iran;
2Dept. of Physics, Ferdowsi Univ. of Mashhad, Mashhad, Iran
3Department of physics, Shahrood University of Technology, Shahrood, Iran
*Author for the correspondence:
Dept. of Physics, Ferdowsi Univ. of Mashhad, Iran
E-mail: [email protected]
An ensemble Monte Carlo simulation has been carriedout to study electron transport properties in GaP, InP and Ga0.5In0.5P materials. The simulation results show that intervalley electron transfer plays a dominant role in higher electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. In addition, the electron velocity in GaP is less sensitive to temperature than other group III-V semiconductors like InP and Ga0.5In0.5P. So GaP devices are expected to be more tolerant to self-heating and high ambient temperature device modeling.
Keywords: Ensemble Monte Carlo; polar optical phonons; deformation potential; self-heating.
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