Indian Journal of Science and Technology
DOI: 10.17485/ijst/2010/v3i6.16
Year: 2010, Volume: 3, Issue: 6, Pages: 634-636
Original Article
Aref Sadeghi Nik1 , Ali Bahari2 , Abdol Ghaffar Ebadi3 , Adel Sadeghi Nik1 and Abbas Ghasemi-Hamzekolaee4*
1 Member of Young Researchers Club, Islamic Azad University, Jouybar branch, Jouybar, Iran
2 Dept. of Physics, Faculty of Basic Science, University of Mazandaran, Babolsar 47416- 1467, Iran
3 Member of Young Researchers Club, Islamic Azad University, Sari branch, 48161-194, Sari, Iran
4 Dept. of Civil Engineering, Islamic Azad University, Jouybar branch, Jouybar, Iran
[email protected] [email protected]
The progressively decreasing feature size of the circuit components, particles and electronic devices has tremendously increased the need for studying and investigating the nano structural properties of materials. We have grown titanium oxide on the Si (100) substrate at 500°C and one atmosphere pressure. Some researchers have believed that an intermediate silicon oxide film can be made between titanium oxide film and substrate but which turned to be of less use. We added silicon nano particles (100 nm) into titanium oxide film that could modify the titanium oxide morphology as revealed in x-ray diffraction patterns and scanning electron microscopy images. The obtained results show that the existence of silicon nano particles in titanium oxide film resulted in better stability. The improved film can thus be used as a good gate dielectric film for the future CMOS (Complementary metal oxide semiconductor) devices.
Keywords: Nanotechnology, nano transistor, nano particle, gate dielectric
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